?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGD3N60UNDF rev. c1 FGD3N60UNDF 600 v, 3 a short circuit rated april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature thermal characteristics notes: 2: mounted on 1 square pcb (fr4 or g-10 material) symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 6 a collector current @ t c = 100 o c 3 a i cm (1) pulsed collector current @ t c = 25 o c 9 a i f diode forward current @ t c = 25 o c 3 a p d maximum power dissipation @ t c = 25 o c 60 w maximum power dissipation @ t c = 100 o c 24 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case 2.08 o c / w r jc (diode) thermal resistance, junction to case 5.0 o c / w r ja thermal resistance, junction to ambient (pcb mount) (2) 150 o c / w e collector jedec to-252 d-pak gate emitter g e c FGD3N60UNDF 600 v, 3 a short circuit rated igbt features ? short circuit rated 10us ? high current capability ? high input impedance ? fast switching ? rohs compliant applications ? sewing machine, cnc, home appliances, motor contro l general description using advanced npt igbt technology, fairchild ? s the npt igbts offer the optimum performance for low-power i nverter- driven applications where low-losses and short-circ uit rugged- ness features are essential.
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGD3N60UNDF rev. c1 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package rel size tape width quanti ty FGD3N60UNDF FGD3N60UNDF to252 330mm 16mm 2500 units symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.3 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 10 ua on characteristics v ge(th) g-e threshold voltage i c = 3ma, v ce = v ge 5.5 6.8 8.5 v v ce(sat) collector to emitter saturation voltage i c = 3a , v ge = 15v - 2.0 2.52 v i c = 3a , v ge = 15v, t c = 125 o c - 2.4 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 165 pf c oes output capacitance - 28 pf c res reverse transfer capacitance - 8.5 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 3a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 5.5 ns t r rise time - 1.8 ns t d(off) turn-off delay time - 22 ns t f fall time - 91 ns e on turn-on switching loss - 52 uj e off turn-off switching loss - 30 uj e ts total switching loss - 82 uj t d(on) turn-on delay time v cc = 400v, i c = 3a, r g = 10 , v ge = 15v, inductive load, t c = 125 o c - 4.8 ns t r rise time - 2.6 ns t d(off) turn-off delay time - 24 ns t f fall time - 122 ns e on turn-on switching loss - 65 uj e off turn-off switching loss - 44 uj e ts total switching loss - 109 uj t sc short circuit withstand time v cc = 350v, r g = 100 , v ge = 15v, t c = 150 o c 10 us
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGD3N60UNDF rev. c1 electrical characteristics of the igbt t c = 25c unless otherwise noted electrical characteristics of the diode t c = 25c unless otherwise noted q g total gate charge v ce = 400v, i c = 3a, v ge = 15v - 1.6 - nc q ge gate to emitter charge - 6.6 - nc q gc gate to collector charge - 11.3 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 3a t c = 25 o c - 1.7 2.2 v t c = 125 o c - 1.6 - t rr diode reverse recovery time i f =3a, di f /dt = 200a/ s t c = 25 o c - 21 - ns t c = 125 o c - 31 - q rr diode reverse recovery charge t c = 25 o c - 23 - nc t c = 125 o c - 49 -
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGD3N60UNDF rev. c1 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current le vel 0 2 4 6 8 10 0 5 10 15 20 25 30 20v t c = 25 o c 17v 15v v ge = 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 0 5 10 15 20 25 30 20v t c = 125 o c 17v 15v v ge = 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 7 8 0 5 10 15 20 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 5 6 7 8 9 10 11 12 0 2 4 6 8 10 12 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 6a 3a i c = 1.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 1.5a 3a 6a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGD3N60UNDF rev. c1 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance cha racteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs . gate resistance gate r esistance 4 8 12 16 20 0 4 8 12 16 20 i c = 1.5a 3a 6a common emitter t c = 125 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 1 10 10 100 500 collector-emitter voltage, v ce [v] capacitance [pf] c ies c oes c res common emitter v ge = 0v, f = 1mhz t c = 25 o c 3030 0 2 4 6 8 10 12 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 10 20 30 40 50 1 10 common emitter v cc = 400v, v ge = 15v i c = 3a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 20 0 10 20 30 40 50 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 3a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ]
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGD3N60UNDF rev. c1 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics v s. collector current coll ector current figure 15. switching loss vs. figure 16. switching loss vs gate resistance collec tor current figure 17. turn off switching figure 18. forward characterist ics soa characteristics 1 2 3 4 5 6 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 1 2 3 4 5 6 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 3a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 1 2 3 4 5 6 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 12 0 1 2 3 4 1 10 80 t c = 75 o c t c = 25 o c t c = 25 o c t c = 75 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 20
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGD3N60UNDF rev. c1 typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time figu re 22. transient thermal impedance of igbt 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50 didt =100a/us t c = 25 o c t c = 125 o c didt = 200a/us stored recovery charge, qrr [nc] forward current, i f [a] 0 1 2 3 4 5 0 1 2 3 4 di/dt =100a/us t c = 25 o c t c = 125 o c di/dt = 200a/us reverse recovery current, irr [a] forward current, i f [a] 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50 didt =100a/us t c = 25 o c t c = 125 o c didt = 200a/us reverse recovery time, trr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 0.01 0.1 1 3 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGD3N60UNDF rev. c1 typical performance characteristics figu re 23. transient thermal impedance of frd 1e-5 1e-4 1e-3 0.01 0.1 0.1 1 5 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FGD3N60UNDF rev. c1 mechanical dimensions d-pak
FGD3N60UNDF 600 v, 3 a short circuit rated ?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FGD3N60UNDF rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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